Fecha de publicación: 05/07/2001 Fuente: WIPO "bee" A semiconductor device for use in a memory cell including an active matrix provided with a transistor and a first insulating layer formed around the transistor; a capacitor structure, formed on top of the first insulating layer, composed of a bottom electrode, a capacitor thin film placed on top of the bottom electrode and a top electrode formed on top of the capacitor thin film; a hydrogen barrier layer, formed on the capacitor structure, for protecting the capacitor structure from hydrogen diffusion; a second insulating layer formed on top of the transistor and the capacitor structure; and a metal interconnection formed on top of the second insulating layer to electrically connect the transistor to the capacitor structure.