Fecha de publicación: 28/04/1998 Fuente: WIPO "piquera" A process for lowering the dielectric constant of a layer on a semiconductor wafer is described. The presence of the fullerene in the composite layer changes its dielectric constant. The process forms, on the wafer, a composite layer comprising matrix-forming material and a fullerene. The fullerene may be removed from the composite layer to leave an open porous layer. Removing the fullerene may be accomplished, for example, by contacting the composite layer with a liquid which is a solvent for the fullerene but not for the insulation material or by oxidizing the fullerene. The processes and insulation layers described are particularly useful for integrated circuits.