Fecha de publicación: 02/10/2008 Fuente: WIPO "miel" Methods for depositing a gate insulator layer and a semiconductor layer onto a large area substrate with improved film uniformity, device mobility and stability are provided. The film properties of the gate insulator layer and the semiconductor layer are selected so that higher electron mobility (greater than 0.7 centimeters squared per voltage per second) is obtained, thereby efficiently enhancing the performance and stability of TFT devices. Improvements in film uniformity may also be realized.