Fecha de publicación: 29/09/2011 Fuente: WIPO "miel" A power semiconductor device (1) with layers of different conductivity types between an emitter electrode (2) on an emitter side (11) and a collector electrode (25) on a collector side (15) is provided. The device comprises: - a drift layer (6) of the first conductivity type, - a first base layer (4) of a second conductivity type, which is arranged between the drift layer (6) and the emitter electrode (2), which first base layer (4) is in direct electrical contact to the emitter electrode (2), - a first source region (5) of the first conductivity type, which is arranged on the emitter side (11) embedded into the first base layer (4) and contacts the emitter electrode (2), which first source region (5) has a higher doping concentration than the drift layer (6), - a first gate electrode (3), which is electrically insulated from the first base layer (4), the first source region (5) and the drift layer (6) and which first gate electrode (3) is arranged in the same plane and lateral to the first base layer (4) and extends deeper into the drift layer (6) than the first base layer (4), - a second base layer (45) of the second conductivity type, which is arranged in the same plane and lateral to the first base layer (4), - a second gate electrode (35), which is arranged on top of the emitter side (11), and - a second source region (55) of the first conductivity type, which is arranged on the emitter side (11) embedded into the second base layer (45) and extends into a region below the second gate electrode (35), which second source region (55) has a higher doping concentration than the drift layer (6), wherein the second gate electrode (35) is electrically insulated from the second base layer (45), the second source region (55) and the drift layer (6) by a second insulating layer (36).