Fecha de publicación: 04/12/2008 Fuente: WIPO "miel" A device for measuring the resistivity ρc of an interface between a semiconductor and a metal, including at least: one dielectric layer, at least one semiconductor-based element of a substantially rectangular shape, which is arranged on the dielectric layer, having a lengthwise L and widthwise W face in contact with the dielectric layer and having a thickness t, and at least two interface portions containing the metal or an alloy of said semiconductor and said metal, wherein each of two opposing faces of the semiconductor element, having a surface equal to t×W and being perpendicular to the face in contact with the dielectric layer, being completely covered by one of the interface portions.