Fecha de publicación: 17/02/2005 Fuente: WIPO "miel" A radio frequency (RF) detector integrated circuit (IC) (40) includes a silicon substrate (42). Detector cells (44) having gallium arsenide (GaAs) RF detector diodes (D1, D2) and amplifier stages (48) having GaAs field effect transistor (GaAs FET) circuits are all formed on the single silicon substrate (42). The superior electron transport properties of GaAs results in a substantial increase in the upper RF input frequency limit of the RF detector IC (40). This makes the RF detector IC (40) suitable for systems requiring frequencies above 2.5 GHz.