METHOD FOR FORMING OHMIC CONTACTS, PARTICULARLY OF Ni(GeSn) TYPE IMPLEMENTING LASER ANNEALING

Fecha de publicación: 03/02/2022
Fuente: WIPO "colmena"
The invention relates to a method for producing ohmic contacts, of type including a metal, a semiconductor and tin, including:



a) forming a first layer (6), of an alloy of the semiconductor and of tin;
b) then, on the first layer, forming a second layer (8), of said metal;
c) laser annealing the first layer and the second layer at an energy density between 0.1 and 2 J/cm2.